Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source-Reference-Cited by-同舟云学术

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Published:2020-12-07 Issue:21 Volume:128 Page:215305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Becker L.¹^ORCID,Storck P.¹,Schulz T.²^ORCID,Zoellner M. H.³,Di Gaspare L.⁴,Rovaris F.⁵^ORCID,Marzegalli A.⁵,Montalenti F.⁵^ORCID,De Seta M.⁴,Capellini G.³⁴^ORCID,Schwalb G.¹^ORCID,Schroeder T.²,Albrecht M.²^ORCID

Affiliation:

1. Siltronic AG, Hanns-Seidel-Platz 4, 81737 Munich, Germany

2. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany

3. IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

4. Università di Roma Tre, via Vasca Navale 84, 00146 Rome, Italy

5. Università degli Studi di Milano-Bicocca, Via R. Cozzi 55, 20126 Milano, Italy

Funder

Electronic Components and Systems for European Leadership

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0032454

Reference27 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

2. Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

3. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

4. Defects in epitaxial multilayers

5. Nature of misfit dislocation sources in strained‐layer semiconductor structures

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