Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition-Reference-Cited by-同舟云学术

Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

Published:2017-11 Issue:11 Volume:64 Page:4587-4593
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Witters L.^ORCID,Arimura H.,Sebaai F.,Hikavyy A.,Milenin A. P.,Loo R.^ORCID,De Keersgieter A.,Eneman G.,Schram T.,Wostyn K.,Devriendt K.,Schulze A.,Lieten R.^ORCID,Bilodeau S.,Cooper E.,Storck P.,Chiu E.,Vrancken C.,Favia P.,Vancoille E.,Mitard J.,Langer R.,Opdebeeck A.,Holsteyns F.,Waldron N.,Barla K.,De Heyn V.,Mocuta D.,Collaert N.

Funder

imec

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8076920/08061030.pdf?arnumber=8061030

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