Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance
Author:
Xie Lu12ORCID, Zhu Huilong12ORCID, Zhang Yongkui1, Ai Xuezheng1, Li Junjie1, Wang Guilei1, Liu Jinbiao1, Du Anyan1, Yang Hong1, Yin Xiaogen12, Huang Weixing12, Li Chen12, Li Yangyang12, Wang Qi1, Lu Shunshun1, Kong Zhenzhen1ORCID, Xiang Jinjuan1, Du Yong1, Luo Jun1, Li Junfeng1, Radamson Henry H.12, Wang Wenwu1, Ye Tianchun1
Affiliation:
1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China 2. University of Chinese Academy of Sciences, Beijing 100049, China
Funder
National Key Research and Development Program of China Academy of Integrated Circuit Innovation Beijing Superstring Academy of Memory Technology
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Reference35 articles.
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