Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance
Author:
Affiliation:
1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
Funder
National Key Research and Development Program of China
Academy of Integrated Circuit Innovation
Beijing Superstring Academy of Memory Technology
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c02518
Reference35 articles.
1. Vertical GAAFETs for the Ultimate CMOS Scaling
2. Weckx, P.; Ryckaert, J.; Putcha, V.; De Keersgieter, A.; Mocuta, A.; Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm. In 2017 IEEE International Electron Devices Meeting (IEDM); IEEE, 2018.
3. Loubet, N.; Hook, T.; Montanini, P.; Yeung, C. W.; Khare, M. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET. In 2017 Symposium on VLSI Technology; IEEE, 2017; pp T230–T231.
4. State of the Art and Future Perspectives in Advanced CMOS Technology
5. Jagannathan, H.; Anderson, B.; Sohn, C. W.; Tsutsui, G.; Strane, J.; Xie, R.; Fan, S.; Kim, K. I.; Song, S.; Sieg, S.; Seshadri, I.; Mochizuki, S.; Wang, J.; Rahman, A.; Cheon, K. Y.; Hwang, I.; Demarest, J.; Do, J.; Fullam, J.; Jo, G.; Hong, B.; Jung, Y.; Kim, M.; Kim, S.; Lallement, R.; Levin, T.; Li, J.; Miller, E.; Montanini, P.; Pujari, R.; Osborn, C.; Sankarapandian, M.; Son, G. H.; Waskiewicz, C.; Wu, H.; Yim, J.; Young, A.; Zhang, C.; Varghese, A.; Robison, R.; Burns, S.; Zhao, K.; Yamashita, T.; Dechene, D.; Guo, D.; Divakaruni, R.; Wu, T.; Seo, K. I.; Bu, H. Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices. In 2021 IEEE International Electron Devices Meeting (IEDM); IEEE, 2021; p 26.1.1.
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The study of electron mobility on ultra-scaled silicon nanosheet FET;Physica Scripta;2024-06-21
2. A Novel Fin-Shape Double-Gate GaAs p-MOSFET With Intrinsic Source and Enhanced Switching Performance;IEEE Transactions on Dielectrics and Electrical Insulation;2024-06
3. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09
4. Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process;Journal of Alloys and Compounds;2024-05
5. Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions;ACS Applied Materials & Interfaces;2024-01-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3