Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions-Reference-Cited by-同舟云学术

Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions

Published:2024-01-11 Issue:4 Volume:16 Page:5268-5277
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ogunfowora Lawal Adewale¹,Singh Ishwar¹,Arellano Noel¹,Pattison Thomas G.¹^ORCID,Magbitang Teddie¹,Nguyen Khanh¹,Ransom Brandi¹,Lionti Krystelle¹,Nguyen Son²,Topura Teya¹,Delenia Eugene¹,Sherwood Mark¹,Savoie Brett M.³^ORCID,Wojtecki Rudy¹^ORCID

Affiliation:

1. International Business Machines─Almaden Research Center, San Jose, California 95120, United States

2. International Business Machines─Semiconductor Technology Research, Albany, New York 12203, United States

3. Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c14821

Reference50 articles.

1. A brief review of atomic layer deposition: from fundamentals to applications

2. The use of atomic layer deposition in advanced nanopatterning

3. Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

4. From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

5. Area-Selective Deposition of Tantalum Nitride with Polymerizable Monolayers: From Liquid to Vapor Phase Inhibitors

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