<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>N</mml:mi></mml:mrow></mml:math> - and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>P</mml:mi></mml:mrow></mml:math> -type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors-Reference-Cited by-同舟云学术

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N - and P -type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors

Published:2024-01-26 Issue:1 Volume:8 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Li Qiuhui,Zheng Tao,Xu Lin,Fang Shibo^ORCID,Yang Zongmeng,Xu Linqiang,Li Ying^ORCID,Wu Baochun,Yang Xingyue^ORCID,Quhe Ruge,Ying Guo,Lu Jing

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Natural Science Basic Research Program of Shaanxi Province

Peking University

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.014603/fulltext

Reference58 articles.

1. Transistors based on two-dimensional materials for future integrated circuits

2. Two-dimensional materials for next-generation computing technologies

3. High ambipolar mobility in cubic boron arsenide

4. Promises and prospects of two-dimensional transistors

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