Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices-Reference-Cited by-同舟云学术

Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices

Published:2023-08-23 Issue:2 Volume:20 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Corley-Wiciak C.^ORCID,Zoellner M.H.^ORCID,Zaitsev I.^ORCID,Anand K.^ORCID,Zatterin E.,Yamamoto Y.^ORCID,Corley-Wiciak A.A.^ORCID,Reichmann F.,Langheinrich W.,Schreiber L.R.^ORCID,Manganelli C.L.^ORCID,Virgilio M.^ORCID,Richter C.^ORCID,Capellini G.^ORCID

Funder

Federal Ministry of Education and Research

High-Definition Crystalline Silicon-Germanium Structures for Quantum Circuits

Quantum Large Scale integration in Silicon

Halbleiter-Quantenprozessor mit shuttlingbasierter skalierbarer Architektur

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.20.024056/fulltext

Reference60 articles.

1. Nanoscale silicon-on-insulator deformation induced by stressed liner structures

2. Formation of strain-induced quantum dots in gated semiconductor nanostructures

3. Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric

4. Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance

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