Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric

Published:2007-07-16 Issue:3 Volume:91 Page:033511
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kang Chang Yong,Choi Rino,Hussain M. M.,Wang Jinguo,Suh Young Jun,Floresca H. C.,Kim Moon J.,Kim Jiyoung,Lee Byoung Hun,Jammy Raj

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2766667

Reference20 articles.

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices;Physical Review Applied;2023-08-23

2. Enhancement of carrier mobility in metal-oxide semiconductor field-effect transistors using negative thermal expansion gate electrodes;Applied Physics Express;2022-11-01

3. Probing Nanoscale Local Lattice Strains in Semiconductor Nanostructures and Devices by Transmission Electron Microscopy;Microscopy and Microanalysis;2018-08

4. Ferroelectric of HfO 2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors;Microelectronics Reliability;2018-04

5. Low-Power and High-Speed Technique for logic Gates in 20nm Double-Gate FinFET Technology;Journal of Physics: Conference Series;2016-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP