Defects at the surface of β-Ga2O3 produced by Ar plasma exposure-Reference-Cited by-同舟云学术

Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

Published:2019-06 Issue:6 Volume:7 Page:061102
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Polyakov A. Y.¹,Lee In-Hwan²^ORCID,Smirnov N. B.¹^ORCID,Yakimov E. B.¹³^ORCID,Shchemerov I. V.¹,Chernykh A. V.¹^ORCID,Kochkova A. I.¹,Vasilev A. A.¹,Carey P. H.⁴^ORCID,Ren F.⁴^ORCID,Smith David J.⁵,Pearton S. J.⁶^ORCID

Affiliation:

1. National University of Science and Technology MISiS, 4 Leninskiy Ave., Moscow 119049, Russia

2. Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea

3. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6 Academician Ossipyan Str., Chernogolovka, Moscow Region 142432, Russia

4. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

5. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

6. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

National Science Foundation

Defense Threat Reduction Agency

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

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