Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4963820
Reference49 articles.
1. Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy
2. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
3. High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
4. Large-size β-Ga2O3 single crystals and wafers
5. Growth and spectral characterization of β-Ga2O3 single crystals
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