Electron energy loss spectroscopy of interfacial layer formation in Gd2O3 films deposited directly on Si(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1446232
Reference32 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
3. Formation of Gd oxide thin films on (111)Si
4. Characterization of Gd[sub 2]O[sub 3] Films Deposited on Si(100) by Electron-Beam Evaporation
5. Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)
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