Characterization of Gd[sub 2]O[sub 3] Films Deposited on Si(100) by Electron-Beam Evaporation-Reference-Cited by-同舟云学术

Characterization of Gd[sub 2]O[sub 3] Films Deposited on Si(100) by Electron-Beam Evaporation

Published:2001 Issue:2 Volume:148 Page:G29
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Landheer D.,Gupta J. A.,Sproule G. I.,McCaffrey J. P.,Graham M. J.,Yang K.-C.,Lu Z.-H.,Lennard W. N.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Thermodynamic stability of binary oxides in contact with silicon

2. Alternate Gate Oxides for Silicon Mosfets Using High-k Dielectrics

3. Dielectric polarizabilities of ions in oxides and fluorides

4. High ε gate dielectrics Gd2O3 and Y2O3 for silicon

5. Structure of epitaxialGd2O3films grown on GaAs(100)

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