Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)-Reference-Cited by-同舟云学术

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Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)

Published:2001-03 Issue:3-4 Volume:173 Page:318-326
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gupta J.A.,Landheer D.,Sproule G.I.,McCaffrey J.P.,Graham M.J.,Yang K.-C.,Lu Z.-H.,Lennard W.N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1999.

2. Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO2Layers and Si Substrates

3. Compositional and electronic properties of chemical‐vapor‐deposited Y2O3thin film‐Si(100) interfaces

4. Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer

5. Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

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