Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO2Layers and Si Substrates-Reference-Cited by-同舟云学术

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Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO2Layers and Si Substrates

Published:1993-04-15 Issue:Part 1, No. 4 Volume:32 Page:1765-1767
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inoue Tomoyasu,Ohsuna Tetsu,Obara Yasuhiro,Yamamoto Yasuhiro,Satoh Masataka,Sakurai Yoshinobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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