Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
2. Applied Materials, Gloucester, Massachusetts 01930, USA
Funder
Semiconductor Research Corporation (SRC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4892079
Reference18 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. Advancing CMOS beyond the Si roadmap with Ge and III/V devices
3. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
4. A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide
5. Ion implantation of Si and Se donors in In0.53Ga0.47As
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