A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide-Reference-Cited by-同舟云学术

A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide

Published:1991-11-01 Issue:11 Volume:138 Page:3440-3449
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Allen E. L.¹²³,Murray J. J.¹²³,Deal M. D.¹²³,Plummer J. D.¹²³,Jones K. S.¹²³,Rubart W. S.¹²³

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305

2. Integrated Circuits Laboratory, Stanford University, Stanford, California 94305

3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2085431/pdf

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping in Semiconductors;Integrated Circuit Fabrication;2023-11-16

2. Optical and Surface Structure Modification of Gallium Arsenide;International Journal of Nanoscience;2023-10-31

3. Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As;Journal of Electronic Materials;2016-05-23

4. Fermi-Level Effects on Extended Defect Evolution in Si+and P+Implanted In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2015-12-17

5. Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As;Applied Physics Letters;2014-07-28