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Preferred diffusional pathways of intrinsic defects and silicon dopants in an ordered phase of In0.5Ga0.5As: A first-principles study

  • Published:2017-11 Issue: Volume:140 Page:39-45
  • ISSN:1359-6454
  • Container-title:Acta Materialia
  • language:en
  • Short-container-title:Acta Materialia

Author:

Reveil Mardochee,Wang Jingyang,Thompson Michael O.,Clancy Paulette

Funder

Colman Fellowship at Cornell

National Science Foundation

Cornell Institute of Computational Science and Engineering (ICSE)

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. The International Technology Roadmap for Semiconductors (ITRS);ITRS,2011

2. Nanometre-scale electronics with IIIV compound semiconductors;del Alamo;Nature,2011

3. Brief review of doping issues in III-V semiconductors;Jones;ECS Trans.,2013

4. Concentration-dependent diffusion of ion-implanted silicon in in0.53ga0.47as;Aldridge;Appl. Phys. Lett.,2014

5. Reviewdopant selection considerations and equilibrium thermal processing limits for n+-in0.53ga0.47as;Lind;ECS J. Solid State Sci. Technol.,2016
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