Resolving the mystery of the concentration-dependence of amphoteric dopant diffusion in III-V semiconductors

Author:

Reveil MardocheeORCID,Clancy Paulette

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Nanometre-scale electronics with III-V compound semiconductors;del Alamo;Nature,2011

2. Semiconductor Industry Association, 2011 International Technology Roadmap for Semiconductors (ITRS), 2011. Retrieved from https://www.semiconductors.org/resources/2011-international-technology-roadmap-for-semiconductors-itrs/.

3. In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si;Dimakis;Appl. Phys. Lett.,2013

4. Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111);Park;Sci. Rep.,2015

5. Si delta doping inside InAs/GaAs quantum dots with different doping densities;Wang;J. Vacuum Sci. Technol. B, Nanotechnol. Microelectron.,2012

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1. Doping in Semiconductors;Integrated Circuit Fabrication;2023-11-16

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