Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111)-Reference-Cited by-同舟云学术

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Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111)

Published:2015-11-19 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Park Dong Woo,Jeon Seong Gi,Lee Cheul-Ro,Lee Sang Jun,Song Jae Yong,Kim Jun Oh,Noh Sam Kyu,Leem Jae-Young,Kim Jin Soo

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep16652.pdf

Reference29 articles.

1. Ford, A. C. et al. Diameter-dependent electron mobility of InAs nanowires. Nano Lett. 9, 360 (2009).

2. Offermans, P. Crego-Calama, M. & Brongersma, S. H. Gas detection with vertical InAs nanowire arrays. Nano Lett. 10, 2412 (2010).

3. Park, D. W. et al. Formation characteristics of a self-catalyzed GaAs nanowire without a Ga droplet on Si(111). J. Kor. Phys. Soc. 61, 2017 (2012).

4. Yao, D. Zhang, G. & Li, B. A universal expression of band gap for silicon nanowires of different cross-section geometries. Nano Lett. 8, 4557 (2008).

5. Yang, N. Zhang, G. & Li, B. Ultra thermal conductivity of isotope-doped silicon nanowires. Nano Lett. 8, 276 (2008).

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5. Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD;ECS Journal of Solid State Science and Technology;2021-07-01

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