In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si-Reference-Cited by-同舟云学术

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In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

Published:2013-09-30 Issue:14 Volume:103 Page:143121
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dimakis Emmanouil,Ramsteiner Manfred,Huang Chang-Ning,Trampert Achim,Davydok Anton,Biermanns Andreas,Pietsch Ullrich,Riechert Henning,Geelhaar Lutz

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4824344

Reference43 articles.

1. Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

2. Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates

3. RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

4. Tunnel field-effect transistors as energy-efficient electronic switches

5. Tunnel field-effect transistor using InAs nanowire/Si heterojunction

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4. Resolving the mystery of the concentration-dependence of amphoteric dopant diffusion in III-V semiconductors;ACTA MATER;2020

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