Author:
Penna Thereza,Tell B.,Liao A. S. H.,Bridges T. J.,Burkhardt G.
Subject
General Physics and Astronomy
Cited by
32 articles.
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1. Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2016
2. Fermi-Level Effects on Extended Defect Evolution in Si+and P+Implanted In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2015-12-17
3. Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
4. Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03
5. Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As;Applied Physics Letters;2014-07-28