Preparation of stable and photoconductive hydrogenated amorphous silicon from a Xe‐diluted silane plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104854
Reference10 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous silicon
3. Controlling hydrogen contents and bond configurations for high-quality and high-reliability a-Si films
4. Reduced light‐induced changes of photoconductivity in duterated amorphous silicon
5. Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
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2. Nanocrystalline silicon thin films from SiH 4 plasma diluted by H 2 and He in RF-PECVD;Journal of Physics and Chemistry of Solids;2017-06
3. Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability;Applied Physics Letters;2013-11-11
4. Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD;Materials Research Bulletin;2012-11
5. Characteristics of hydrogenated silicon thin film deposited by RF-PECVD using He–SiH4 mixture;Vacuum;2011-07
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