Reduced light‐induced changes of photoconductivity in duterated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346288
Reference18 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
3. Stability ofn‐i‐pamorphous silicon solar cells
4. Light‐induced radiative recombination centers in hydrogenated amorphous silicon
5. Light‐induced dangling bonds in hydrogenated amorphous silicon
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1. Absence of enhanced stability in fully deuterated amorphous silicon thin-film transistors;Journal of Applied Physics;2005-09
2. Staebler-Wronski Effect in Hydrogenated Amorphous Silicon and Related Alloy Films;Japanese Journal of Applied Physics;2004-06-09
3. Stability of deuterated amorphous silicon solar cells;Journal of Non-Crystalline Solids;2004-06
4. Stability improvement of deuterated amorphous silicon thin-film transistors characterized by modified Schottky-contact gated-four-probe method;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
5. Nondegrading photoluminescence in porous silicon by deuterium plasma treatment;Physical Review B;2002-04-26
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