Light‐induced dangling bonds in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92402
Reference9 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
3. Light‐induced radiative recombination centers in hydrogenated amorphous silicon
4. The influence of spin defects on recombination and electronic transport in amorphous silicon
5. Defect creation and hydrogen evolution in amorphous Si:H
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