Light soaking-induced performance enhancement in a-Si:H/c-Si heterojunction solar cells-Reference-Cited by-同舟云学术

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Light soaking-induced performance enhancement in a-Si:H/c-Si heterojunction solar cells

Published:2022-06-23 Issue:12 Volume:65 Page:3513-3517
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

He Qiyuan,Hu Zechen,Yu Xuegong,Hang Pengjie,Song Lihui,Lin Dehang,Yang Lifei,Yang Deren

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-022-2062-8.pdf

Reference33 articles.

1. Pankove JI, Tarng ML. Amorphous silicon as a passivant for crystalline silicon. Appl Phys Lett, 1979, 34: 156–157

2. Schulze TF, Beushausen HN, Leendertz C, et al. Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions. Appl Phys Lett, 2010, 96: 252102

3. De Wolf S, Kondo M. Abruptness of a-Si:H/c-Si interface revealed by carrier lifetime measurements. Appl Phys Lett, 2007, 90: 042111

4. Hu Z, He Q, Yuan S, et al. Kinetics study on carrier injection-induced degradation and regeneration at elevated temperature in p-type castmonosilicon passivated emitter rear contact solar cells. Sol RRL, 2021, 5: 2100035

5. Lin D, Hu Z, He Q, et al. New insights on LeTID/BO-LID in p-type mono-crystalline silicon. Sol Energy Mater Sol Cells, 2021, 226: 111085

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