Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD-Reference-Cited by-同舟云学术

Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD

Published:2012-11 Issue:11 Volume:47 Page:3445-3451
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Waman V.S.,Kamble M.M.,Ghosh S.S.,Hawaldar R.R.,Amalnerkar D.P.,Sathe V.G.,Gosavi S.W.,Jadkar S.R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference65 articles.

1. Reversible conductivity changes in discharge‐produced amorphous Si

2. Silicon thin film solar cells deposited under 80°C

3. High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

4. Role of hydrogen in controlling the growth of μc-Si:H films from argon diluted SiH4 plasma

5. Amorphous and nanocrystalline silicon-based multi-junction solar cells

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