Characteristics of hydrogenated silicon thin film deposited by RF-PECVD using He–SiH4 mixture
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference16 articles.
1. High-rate deposition of highly crystallized silicon films from inductively coupled plasma
2. Structural evolution of nanocrystalline silicon thin films synthesized in high-density, low-temperature reactive plasmas
3. Substrate temperature dependence of microcrystalline silicon growth by PECVD technique
4. Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
5. Characteristics of VHF excited hydrogen plasmas using a ladder-shaped electrode
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1. The Variation of Crystalline Structure Induced by Gas Dilution and Thermal Annealing in Silicon Layers Deposited by PECVD Technique;Silicon;2018-12-07
2. Investigation of Silicon Quantum Dots Embedded in Boron-Doped Silicon Oxide Thin Films Prepared by PECVD Applying Ar Dilution;physica status solidi (a);2017-11-23
3. The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition;Journal of Materials Science;2017-11-09
4. Nanocrystalline silicon thin films from SiH 4 plasma diluted by H 2 and He in RF-PECVD;Journal of Physics and Chemistry of Solids;2017-06
5. H2-Ar dilution for improved c-Si quantum dots in P-doped SiNx:H thin film matrix;Applied Surface Science;2017-02
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