Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Published:1991-02-01 Issue:Part 2, No. 2A Volume:30 Page:L142-L144
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

McElheny Peter J.,Suzuki Atsushi,Mashima Satoshi,Hasezaki Kazuhiro,Yamasaki Satoshi,Matsuda Akihisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration;Journal of Alloys and Compounds;2011-02

2. Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells;MRS Proceedings;1997

3. Effect of hydrogen dilution in silane on light induced degradation of hydrogenated amorphous silicon films for solar photovoltaic applications;Solar Energy Materials and Solar Cells;1994-01

4. 1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma;Japanese Journal of Applied Physics;1992-04-15

5. Importance of Charged Dangling Bonds in Explaining the Photodegradation Behavior of Amorphous Silicon Films Prepared by Various Techniques;Japanese Journal of Applied Physics;1991-08-01

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