Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy-Reference-Cited by-同舟云学术

Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy

Published:2009-05-04 Issue:18 Volume:94 Page:182104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Machida Emi,Uraoka Yukiharu,Fuyuki Takashi,Kokawa Ryohei,Ito Takeshi,Ikenoue Hiroshi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3130210

Reference13 articles.

1. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

2. Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization

3. High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C

4. Y. Kuo,Thin Film Transistors: Materials and Processes: Amorphous Silicon Thin Film Transistors(Kluwer Academic, Norwell, 2004), Vol. 1, p. 206.

5. Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films

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