Large grain growth of Ge-rich Ge1−xSnx(x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864627
Reference41 articles.
1. Molecular approaches to p- and n-nanoscale doping of Ge1−ySny semiconductors: Structural, electrical and transport properties
2. Mobility Behavior of Ge1-xSnxLayers Grown on Silicon-on-Insulator Substrates
3. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
4. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
5. Growth of silicon based germanium tin alloys
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