Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4983254
Reference39 articles.
1. Advances in group III-nitride-based deep UV light-emitting diode technology
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1. Observation of threading dislocations with a c + m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM;Journal of Crystal Growth;2022-08
2. Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates;Journal of Applied Physics;2021-06-14
3. Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy;CrystEngComm;2020
4. Vacancy-assisted core transformation and mobility modulation of a-type edge dislocations in wurtzite GaN;Journal of Physics D: Applied Physics;2019-09-18
5. V-shaped dislocations in a GaN epitaxial layer on GaN substrate;AIP Advances;2019-09
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