Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy
Author:
Affiliation:
1. Japan Fine Ceramics Center
2. Nagoya 456-8587
3. Japan
4. Graduate School of Sciences and Technology for Innovation
5. Yamaguchi University
6. Yamaguchi 755-8611
7. Nagoya Institute of Technology
8. Nagoya 466-8555
Abstract
Nonradiative recombination behaviors of threading dislocations and their correlation with the dislocation types.
Funder
New Energy and Industrial Technology Development Organization
Japan Society for the Promotion of Science
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE01344G
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4. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates
5. Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control
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