Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control-Reference-Cited by-同舟云学术

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Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

Published:2018-05-08 Issue:6 Volume:57 Page:065502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujikura Hajime,Konno Taichiro,Suzuki Takayuki,Kitamura Toshio,Fujimoto Tetsuji,Yoshida Takehiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=6/a=065502/pdf

Reference41 articles.

1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

2. GaN Growth Using GaN Buffer Layer

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

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1. Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy;Journal of Applied Physics;2024-08-28

2. New Flux-Excess Aid Technology in the Na-Flux Liquid-Phase Epitaxial Growth of GaN Crystals;Crystal Growth & Design;2024-08-22

3. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches;physica status solidi (RRL) – Rapid Research Letters;2024-06-26

4. Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods;Journal of Crystal Growth;2024-06

5. Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers;Applied Physics Express;2024-05-01

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