Photonic effects in the deactivation of ion implanted arsenic
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367228
Reference26 articles.
1. Arsenic Clustering in Silicon
2. Effect of complex formation on diffusion of arsenic in silicon
3. The Diffusion of Ion‐Implanted Arsenic in Silicon
4. Shallow junctions by high‐dose As implants in Si: experiments and modeling
5. Solid solubility of As in Si as determined by ion implantation and cw laser annealing
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1. Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor;Russian Microelectronics;2014-07
2. Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon;ECS Journal of Solid State Science and Technology;2013
3. Measurement of photostimulated self-diffusion in silicon;Journal of Applied Physics;2011-05-15
4. Nonthermal illumination effects on ultra-shallow junction formation;Applied Physics Letters;2011-05-09
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