Structural anisotropy of nonpolar and semipolar InN epitaxial layers-Reference-Cited by-同舟云学术

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Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Published:2010-10 Issue:7 Volume:108 Page:073529
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Darakchieva V.,Xie M.-Y.,Franco N.,Giuliani F.,Nunes B.,Alves E.,Hsiao C. L.,Chen L. C.,Yamaguchi T.,Takagi Y.,Kawashima K.,Nanishi Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3487923

Reference45 articles.

1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

2. Strain-induced polarization in wurtzite III-nitride semipolar layers

3. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

4. 4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication

5. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga∕N flux ratios on m-plane 4H-SiC substrates

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1. High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD;Journal of Vacuum Science & Technology A;2024-02-27

2. Wurtzite [11-20]-oriented AlFeN films prepared by RF sputtering;AIP Advances;2018-11

3. Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications;Epitaxy;2018-03-07

4. Structural and strain anisotropies of N-polar GaN epilayers on offcut sapphire substrates;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-09

5. Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template;Journal of Applied Physics;2016-05-28

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