m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga∕N flux ratios on m-plane 4H-SiC substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2435806
Reference20 articles.
1. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
3. Molecular-beam epitaxy of p-type m-plane GaN
4. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
5. Dynamic polarization filtering in anisotropically strained M-plane GaN films
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1. Strain of M-plane GaN epitaxial layer grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy;AIP Advances;2018-07
2. Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(112¯0);Applied Physics Letters;2018-01
3. Gallium kinetics on m-plane GaN;Applied Physics Letters;2017-07-10
4. Crystallographic tilt and in-plane anisotropies of ana-plane InGaN/GaN layered structure grown by MOCVD onr-plane sapphire using a ZnO buffer;Journal of Physics D: Applied Physics;2016-01-27
5. Rotation of in-plane structural anisotropy at the interface of an a-plane InN/GaN heterostructure grown by MOCVD on r-plane sapphire;CrystEngComm;2016
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