Crystallographic tilt and in-plane anisotropies of ana-plane InGaN/GaN layered structure grown by MOCVD onr-plane sapphire using a ZnO buffer
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/49/i=8/a=085103/pdf
Reference43 articles.
1. X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD
2. Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates
3. Influence of structural anisotropy to anisotropic electron mobility in a-plane InN
4. Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth
5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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2. Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5;CrystEngComm;2020
3. Surface and optical properties of indium-rich InGaN layers grown on sapphire by migration-enhanced plasma assisted metal organic chemical vapor deposition;Materials Research Express;2018-10-09
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