Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5-Reference-Cited by-同舟云学术

Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5

Published:2020 Issue:1 Volume:22 Page:74-84
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Martínez-Tomás Maria del Carmen¹²³⁴^ORCID,Huerta-Barberà Adelaida¹²³⁴^ORCID,Agouram Saïd¹²³⁴^ORCID,Muñoz-Sanjosé Vicente¹²³⁴^ORCID

Affiliation:

1. Departament de Física Aplicada i Electromagnetisme

2. Universitat de València

3. 46100 Burjassot

4. Spain

Abstract

HRXRD, SEM and TEM techniques were used to investigate crystallographic characteristics of Cd_1−xZn_xO films grown by MOCVD on r-plane sapphire in the transition process from the rock-salt to the wurtzite structure.

Funder

Generalitat Valenciana

Ministerio de Economía, Industria y Competitividad, Gobierno de España

European Regional Development Fund

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/C9CE01483G

Reference30 articles.

1. BAND GAP PREDICTION OF ALLOYED SEMICONDUCTORS

2. Bandgap engineering of sol-gel synthesized amorphous Zn1−xMgxO films

3. Sputtering deposited ternary Zn1−xCdxO crystal films on Si(111) substrates

4. Zn1−xCdxO systems with visible band gaps

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1. Structural, optical, and electrical properties of WZ- and RS-ZnCdO thin films on MgO (100) substrate by molecular beam epitaxy;Journal of Alloys and Compounds;2021-06

2. Realization of rocksalt Zn1−xCdxO thin films with an optical band gap above 3.0 eV by molecular beam epitaxy;CrystEngComm;2020