Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(112¯0)
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5006435
Reference32 articles.
1. GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
2. Strain effects in GaN/AlN short-period superlattices for intersubband optoelectronics
3. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates
4. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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