Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1500432
Reference23 articles.
1. Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices
2. Molecular beam epitaxy of GaN/AlxGa1−xN superlattices for 1.52–4.2μm intersubband transitions
3. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
4. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells
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2. Mid-infrared intersubband absorption in strain-balanced non-polar (In)AlGaN/InGaN multi-quantum wells;Optical Materials Express;2021-09-01
3. Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra;Nanomaterials;2021-01-22
4. Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures;Advanced Functional Materials;2020-09-09
5. Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions;Applied Physics Letters;2020-05-18
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