Molecular beam epitaxy of GaN/AlxGa1−xN superlattices for 1.52–4.2μm intersubband transitions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Quantum Cascade Laser
2. Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells
3. 1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
4. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
5. Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
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2. Tunnelling and current density in short period strained AlN/GaN superlattices;Physica E: Low-dimensional Systems and Nanostructures;2014-09
3. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces;Journal of Applied Physics;2013-07-21
4. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells;Applied Physics Letters;2013-05-13
5. Intersubband absorption properties of high Al content Al x Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition;Nanoscale Research Letters;2012-11-26
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