All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces-Reference-Cited by-同舟云学术

All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces

Published:2013-07-21 Issue:3 Volume:114 Page:033709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Filho O. P. Silva,Ribeiro M.,Pelá R. R.,Teles L. K.,Ferreira L. G.,Marques M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4812493

Reference82 articles.

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4. GaN/AlGaN intersubband optoelectronic devices

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