Plasma hydrogenation of strain-relaxed SiGe∕Si heterostructure for layer transfer-Reference-Cited by-同舟云学术

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Plasma hydrogenation of strain-relaxed SiGe∕Si heterostructure for layer transfer

Published:2004-11-22 Issue:21 Volume:85 Page:4944-4946
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Peng,Chu Paul K.,Höchbauer T.,Nastasi M.,Buca D.,Mantl S.,Theodore N. David,Alford T. L.,Mayer J. W.,Loo R.,Caymax M.,Cai M.,Lau S. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1824171

Reference12 articles.

1. Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

2. SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen

3. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

4. SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

5. Relaxed silicon-germanium on insulator substrate by layer transfer

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High quality extremely thin SOI fabricated by facilitated ion-cut with H-trapping effect;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03

2. Defect studies in strain-relaxed Si$_{1-x}$Ge$_{x}$ alloys;TURKISH JOURNAL OF PHYSICS;2013

3. Defect Analysis in Semiconductor Materials Based on p-n Junction Diode Characteristics;Defect and Diffusion Forum;2007-01

4. Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

5. Silicon layer transfer using plasma hydrogenation;Applied Physics Letters;2005-09-12

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