Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering-Reference-Cited by-同舟云学术

Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

Published:2020-07-27 Issue:4 Volume:117 Page:042101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hirai Hirohisa¹^ORCID,Hatakeyama Tetsuo¹^ORCID,Sometani Mitsuru¹^ORCID,Okamoto Mitsuo¹^ORCID,Harada Shinsuke¹^ORCID,Okumura Hajime¹^ORCID,Yamaguchi Hiroshi¹

Affiliation:

1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 16–1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0012324

Reference38 articles.

1. Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices

2. Electrical transport inn-type 4H silicon carbide

3. Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

4. Active defects in MOS devices on 4H-SiC: A critical review

5. Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

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