Abstract
Abstract
Mobility degradation under a high effective normal field (1 MV cm−1 < E
eff < 2 MV cm−1) in an inversion layer of 4H-silicon carbide (SiC) (0001) metal–oxide–semiconductor field-effect transistors (MOSFETs) annealed in POCl3 is investigated by applying a negative body bias (0 V ≥ V
BS ≥ −40 V). The effective channel mobility (μ
eff) is proportional to E
eff
−2.3–−2.2 in the range 1 MV cm−1 ≤ E
eff. On the basis of the obtained results, the authors propose that the mobility degradation in the high-E
eff region is caused by strong surface roughness scattering in SiC MOSFETs with a very low interface state density.
Subject
General Physics and Astronomy,General Engineering
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献