Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation-Reference-Cited by-同舟云学术

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Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Published:2014-12 Issue:12 Volume:35 Page:1176-1178
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Okamoto Dai,Sometani Mitsuru,Harada Shinsuke,Kosugi Ryoji,Yonezawa Yoshiyuki,Yano Hiroshi

Funder

JSPS KAKENHI [Grant-in-Aid for Young Scientists (B)]

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6954676/06936906.pdf?arnumber=6936906

Cited by 91 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of silicon carbide CMOS technology for harsh environments;Materials Science in Semiconductor Processing;2024-08

2. Investigating the mechanism of SiO₂/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO₂;Applied Physics Express;2024-07-31

3. Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction;AIP Advances;2024-07-01

4. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface;APL Materials;2023-11-01

5. Atomic scale localization of Kohn–Sham wavefunction at SiO2/4H–SiC interface under electric field, deviating from envelope function by effective mass approximation;Applied Physics Letters;2023-05-29

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