Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2742572
Reference35 articles.
1. Low-resistance Ta/Ti Ohmic contacts for p-type GaN
2. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
3. Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices
4. Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers
5. Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1−xN capping layers
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3. Low Specific Contact Resistivity of 10−3Ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate;IEEE Transactions on Electron Devices;2022-10
4. MOCVD growth of ZrN thin films on GaN/Si templates and the effect of substrate temperature on growth mode, stress state, and electrical properties;Journal of Physics D: Applied Physics;2022-08-02
5. Methods to achieve Ohmic contact to p-GaN;International Conference on Optoelectronic Materials and Devices (ICOMD 2021);2022-02-16
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