Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1423387
Reference30 articles.
1. Ohmic Contacts for Compound Semiconductors
2. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
3. Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN
4. Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN
5. Influence of oxygen on the activation of p-type GaN
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