Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN-Reference-Cited by-同舟云学术

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Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN

Published:1999-10 Issue:7 Volume:86 Page:3826-3832
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Li-Chien,Chen Fu-Rong,Kai Ji-Jung,Chang Li,Ho Jin-Kuo,Jong Charng-Shyang,Chiu Chien C.,Huang Chao-Nien,Chen Chin-Yuen,Shih Kwang-Kuo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.371294

Reference26 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy

3. Low resistance ohmic contacts on wide band‐gap GaN

4. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN

5. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN

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3. Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes;Materials;2023-10-06

4. Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers;Journal of Semiconductors;2023-05-01

5. Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes;IEEE Photonics Journal;2023-04

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