Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1425065
Reference12 articles.
1. High power AlGaN/GaN HEMTs for microwave applications
2. Blue InGaN-based laser diodes with an emission wavelength of 450 nm
3. Effects of surface treatments and metal work functions on electrical properties atp-GaN/metal interfaces
4. Surface analysis of (NH[sub 4])[sub 2]S[sub x]-treated InGaN using x-ray photoelectron spectroscopy
5. p-GaN surface treatments for metal contacts
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3. Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching;International Journal of Hydrogen Energy;2021-01
4. Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact;Coatings;2019-04-28
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