Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration-Reference-Cited by-同舟云学术

Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration

Published:2010-06-14 Issue:24 Volume:96 Page:243504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chang Seongpil,Dong Ki-Young,Park Jung-Ho,Oh Tae-Yeon,Kim Jong-Woo,Lee Sang Yeol,Ju Byeong-Kwon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3454775

Reference12 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

3. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

4. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

5. Near-Room-Temperature Thermal Chemical Vapor Deposition of Poly(chloro-p-xylylene)/SiO2 Nanocomposites

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